Patent · US Active

Method and apparatus for high speed silicon optical modulation using PN diode

US7747122B2 · kind B2 · utility

29Cited by

1References

18Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Yoel Shetrit · Mevaseret Tsiyon, IL
Ling Liao · Santa Clara, US
Ansheng Liu · Cupertino, US

Key dates

Filing date	Sep 30, 2008
Grant date	Jun 29, 2010
Priority date	—
Expiry date	Oct 14, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG02F1/225
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.