Chemical vapor deposition apparatus
US7749326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2008 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Dec 29, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45589
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.