Method of manufacturing fine features for thin film transistors

US7749396B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Eugene M. Chow · Fremont, US
• William S. Wong · Redwood City, US
• Michael L. Chabinyc · Mountain View, US
• Ana Claudia Arias · Redwood City, US

Key dates

• Filing date: Mar 24, 2006
• Grant date: Jul 6, 2010
• Expiry date: Apr 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A process for fabricating fine features such as small gate electrodes on a transistor. The process involves the jet-printing of a mask and the plating of a metal to fabricate sub-pixel and standard pixel size features in one layer. Printing creates a small sub-pixel size gap mask for plating a fine feature. A second printed mask may be used to protect the newly formed gate and etch standard pixel size lines connecting the small gates.