SiOx:Si sputtering targets and method of making and using such targets
US7749406B2 · kind B2 · utility
1Cited by
10References
23Claims
0Family size
Inventors
Key dates
| Filing date | Aug 11, 2005 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Sep 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2991
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Silicon oxide and electrically conductive doped silicon materials are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx, and yet is electrically conductive due to the presence of the Si. Such a composite material finds use as a target for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen applications, barrier thin films in LCD displays and optical thin films used in a wide variety of applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.