Member for semiconductor device and production method thereof
US7749430B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2006 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A member for a semiconductor device of low price, capable of forming a high quality plating layer on a surface, having heat conductivity at high temperature (100° C.) of more than or equal to 180 W/m·K and toughness that will not cause breaking due to screwing, and will not cause solder breaking due to heat stress when it is bonded to other member with solder, and a production method thereof are provided. A member for a semiconductor device (1) having a coefficient of thermal expansion ranging from 6.5×10−6/K to 15×10−6/K inclusive, and heat conductivity at 100° C. of more than or equal to 180 W/m·K, has: a base material (11) formed of an aluminum-silicon carbide composite material starting from powder material in which particulate silicon carbide is dispersed in aluminum or aluminum alloy, and the content of the silicon carbide is from 30% by mass to 85% by mass inclusive; and a superficial layer (12) containing aluminum or aluminum alloy starting from a melt material bonded on top and bottom faces of the base material (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.