Method for forming quantum dots by alternate growth process
US7749787B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Nov 14, 2005 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Jan 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.