Method for manufacturing an integrated circuit including an electrolyte material layer

US7749805B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Cay-Uwe Pinnow · Birkenfeld, DE
• Klaus-Dieter Ufert · Unterschleißheim, DE

Key dates

• Filing date: Mar 10, 2005
• Grant date: Jul 6, 2010
• Expiry date: Jul 21, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method for manufacturing an electrolyte material layer with a chalcogenide material incorporated or deposited therein for use in semiconductor memory devices, in particular resistively-switching memory devices or components. The method comprises the steps of producing a semiconductor substrate, depositing a binary chalcogenide layer onto the semiconductor substrate, depositing a sulphur-containing layer onto the binary chalcogenide layer, and creating a ternary chalcogenide layer comprising at least two different chalcogenide compounds ASexSy. One component A of the chalcogenide compounds ASexSy comprises materials of the IV elements main group, e.g., Ge, Si, or of a transition metal, preferably of the group consisting of Zn, Cd, Hg, or a combination thereof.