Methods of forming a semiconductor device including buried bit line
US7749840B2 · kind B2 · utility
7Cited by
5References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Oct 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
Abstract
A method of forming a buried interconnection includes removing a semiconductor substrate to form a groove in the semiconductor substrate. A metal layer is formed on inner walls of the groove using an electroless deposition technique. A silicidation process is applied to the substrate having the metal layer, thereby forming a metal silicide layer on the inner walls of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.