Methods of manufacturing semiconductor device
US7749902B2 · kind B2 · utility
6Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2007 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.