Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same
US7749920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2004 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Jan 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrated circuit devices, it is insufficient in current-voltage characteristic and has not yet been put into practical use. According to the invention, by treating the fine porous diamond particle film with an aqueous solution of a salt of a metal such as barium and calcium, the carbonate or sulfate of which is insoluble or less soluble, and a hydrophobic agent such as hexamethyl disilazane or triethyl monochloro silane, as well as a reinforcing agent containing one of dichlorotetramethyl disiloxane or dimethoxytetramethyl disiloxane, thereby capable of putting the dielectric breakdown voltage and the leak current within a specified range of a practical standard.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.