Patent · US Active

Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder

US7749930B2 · kind B2 · utility

2Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 2006
Grant dateJul 6, 2010
Priority date
Expiry dateAug 20, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P40/57
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

An ideal quartz glass for a wafer jig for use in an environment having an etching effect is distinguished by both high purity and high resistance to dry etching. To indicate a quartz glass that substantially fulfills these requirements, it is suggested according to the invention that the quartz glass is doped with nitrogen at least in a near-surface area, has a mean content of metastable hydroxyl groups of less than 30 wt ppm and that its fictive temperature is below 1250° C. and its viscosity is at least 1013 dPa·s at a temperature of 1200° C. An economic method for producing such a quartz glass comprises the following method steps: melting an SiO2 raw material to obtain a quartz glass blank, the SiO2 raw material or the quartz glass blank being subjected to a dehydration measure, heating the SiO2 raw material or the quartz glass blank to a nitriding temperature in the range between 1050° C. and 1850° C. in an ammonia-containing atmosphere, a temperature treatment by means of which the quartz glass of the quartz glass blank is set to a fictive temperature of 1250° C. or less, and a surface treatment of the quartz glass blank with formation of the quartz glass jig.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.