Patent · US Active

LED with improved light emittance profile

US7750357B2 · kind B2 · utility

0Cited by
0References
19Claims
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Key dates

Filing dateJun 21, 2005
Grant dateJul 6, 2010
Priority date
Expiry dateJan 20, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K2102/331
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

An LED includes a substrate layer with a first surface and a second surface opposing the first surface and having a refractive index of n1. A light emitter is provided on the first surface and an array of particles is arranged on the second surface. The index matching layer between the particles on the second surface has a refractive index of n2being n2≧n1−0.5 and n2≦n1+3. Further, the filling height of the index matching layer is lower than the maximum height of the array of particles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.