Nitride semiconductor device
US7750369B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2008 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Dec 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer; a gate electrode formed to oppose the lamination boundary; and a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.