Circuit arrangement and a method for galvanically separate triggering of a semiconductor switch
US7750720B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Sep 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/066
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit arrangement and a method for the DC-isolated driving of a semiconductor switch, wherein the circuit arrangement has a control circuit, a driver, a transformer for the DC-isolated transfer of a drive signal from the controller as switching signal into the driver and means for rectifying the switching signal, wherein the driver contains the semiconductor switch having a gate, a source and a drain, wherein the semiconductor switch can be switched by a predetermined first voltage between the gate and the source with the result that a predetermined current flows between the drain and the source, wherein the switching signal can be applied to the gate in order to switch the semiconductor switch, wherein the driver contains a control transistor having a base, an emitter and a collector, wherein the control transistor can be switched by a predetermined second voltage between the base and the emitter, with the result that the gate of the semiconductor switch can be connected to the source of the semiconductor switch via the emitter and the collector in order to change over the semiconductor switch, wherein voltage generating means are provided for generating a third voltage, recti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.