Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

US7754352B2 · kind B2 · utility

Assignee

• Alliance for Sustainable Energy, LLC · US

Inventors

• John Perkins · Ilminster, GB
• Marinus Franciscus Antonius Maria van Hest · Lakewood, US
• David S. Ginley · Evergreen, US
• Matthew Taylor · Cincinnati, US
• George A. Neuman · Holland, US
• Henry A. Luten · Holland, US
• Jeffrey A. Forgette · Hudsonville, US
• John S. Anderson · Holland, US

Key dates

• Filing date: Apr 20, 2007
• Grant date: Jul 13, 2010
• Expiry date: May 3, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12667
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.