Method of avoiding unwanted metal deposition on a semiconductor resistor structure
US7754558B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2005 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
An electrical resistance is produced in a semiconductor device by first providing a semiconductor resistor structure that includes a semiconductor resistor having formed thereon a native oxide layer. A portion of the native oxide layer that overlies a corresponding top surface portion of the semiconductor resistor is removed, in order to expose the top surface portion of the semiconductor resistor. Metal is deposited on the exposed top surface portion of the semiconductor resistor. A chemical reaction is effectuated in order to reduce the likelihood of metal reacting with the underlying silicon on any portion of the semiconductor resistor other than the top surface portion thereof. The chemical reaction can be an oxidation reaction that produces on the semiconductor resistor structure an oxide layer other than the native oxide layer and substantially thicker than the native oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.