Method for manufacturing semiconductor device
US7754595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01S7/5208
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.