Solid state image pickup device and method of producing solid state image pickup device
US7755090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Feb 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.