Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
US7755103B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2006 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T83/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a mirror polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.