Capacitor in semiconductor device and method of manufacturing the same
US7755127B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 25, 2009 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.