Semiconductor device and method of fabricating the same
US7755201B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of fabricating the same reduce the likelihood of the occurrence of electrical defects. The device includes a first interlayer insulating film on a semiconductor substrate; a contact pad spacer on the first interlayer insulating film; and a contact pad in the first interlayer insulating film and the contact pad spacer. The cross-sectional area of an upper portion of the contact pad in the contact pad spacer in a direction horizontal to the substrate is equal to or less than a cross-sectional area of an intermediate portion at an interface between the contact pad spacer and the first interlayer insulating film in a direction horizontal to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.