Miniaturized high conductivity thermal/electrical switch
US7755899B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | May 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2037/008
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is a thermally controlled switch with high thermal or electrical conductivity. Microsystems Technology manufacturing methods are fundamental for the switch that comprises a sealed cavity formed within a stack of bonded wafers, wherein the upper wafer comprises a membrane assembly adapted to be arranged with a gap to a receiving structure. A thermal actuator material, which preferably is a phase change material, e.g. paraffin, adapted to change volume with temperature, fills a portion of the cavity. A conductor material, providing a high conductivity transfer structure between the lower wafer and the rigid part of the membrane assembly, fills another portion of the cavity. Upon a temperature change, the membrane assembly is displaced and bridges the gap, providing a high conductivity contact from the lower wafer to the receiving structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.