Interband tunneling intersubband transition semiconductor laser
US7756176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Apr 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.