Method for manufacturing silicon device
US7759139B2 · kind B2 · utility
6Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Aug 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/014
Abstract
A method for manufacturing a silicon device includes steps of: forming a silicon layer 4a that indicates a second conductivity type on a first surface S1a of a silicon substrate 2a that indicates a first conductivity type; and exposing, after the step, a third surface S3a of the silicon layer 4a for a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.