Method of fabricating electric field sensor having electric field shield
US7759153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jul 18, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01Q60/30
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.