Method for embedding dies
US7759167B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Nov 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided, involving forming a first flexible film on a rigid carrier substrate, attaching a die to the flexible film, so as to leave contacts on the die exposed, forming a wiring layer to contact the contacts of the die, and releasing the flexible film where the die is attached, from the carrier. An area of the first flexible film where the die is attached can have a lower adhesion to the rigid carrier substrate than other areas, so that releasing can involve cutting the first flexible film to release a part of the area of lower adhesion, and leaving an area of higher adhesion. A combined thickness of the die, the first flexible film and the wiring layer can be less than 150 μm, so that the device is bendable. Devices can be stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.