Semiconductor device including capacitor and method of fabricating same
US7759192B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2005 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-Si1-xGex layer and a doped polysilicon layer epitaxially deposited on the doped poly-Si1-xGex layer and the contact plug makes a contact with the doped polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.