Semiconductor memory device and method of fabricating the same
US7759248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | May 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.