Multijunction solar cell with a bypass diode having an intrinsic layer
US7759572B2 · kind B2 · utility
10Cited by
22References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2004 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
A multijunction solar cell including first and second solar cells on a substrate with an integral bypass diode having an intrinsic layer and operative for passing current when the multijunction solar cell is shaded. In one embodiment, a vertical sequence of solar cells are epitaxially grown on a first portion of the substrate, and the layers of the diode are epitaxially grown on a second portion of the substrate with the layers of the bypass diode being deposited subsequent to the layers of the top solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.