Method for manufacturing a patterned structure
US7759609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Nov 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/048
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.