Implementation of avalanche photo diodes in (Bi)CMOS processes

US7759650B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Anco Heringa · Eindhoven, NL
• Thomas Frach · Aachen, DE
• Prabhat Agarwal · Leuven, BE

Key dates

• Filing date: Apr 10, 2007
• Grant date: Jul 20, 2010
• Expiry date: Aug 20, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A radiation detector (46) includes a semiconductor layer(s) (12) formed on a substrate (14) and a scintillator (30) formed on the semiconductor layer(s) (12). The semiconductor layer(s) (12) includes an n-doped region (16) disposed adjacent to the substrate (14), and a p-doped region (18) disposed adjacent to the n-doped region (16). A trench (20) is formed within the semiconductor layer(s) (12) and around the p-doped region (18) and is filled with a material (22) that reduces pn junction curvature at the edges of the pn junction, which reduces breakdown at the edges. The scintillator (30) is disposed over and optically coupled to the p-doped regions (18). The radiation detector (46) further includes at least one conductive electrode (24) that electrically contacts the n-doped region.