Phase change memory device including resistant material
US7759667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jul 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.