Metal-oxide-semiconductor device including an energy filter

US7759729B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mikael T. Bjoerk · Zürich, CH
• Siegfried F. Karg · Zürich, CH
• Joachim Knoch · Castrop-Rauxel, DE
• Heike E. Riel · Thalwil, CH
• Walter Riess · Thalwil, CH
• Heinz Schmid · Thalwil, CH

Key dates

• Filing date: Feb 7, 2008
• Grant date: Jul 20, 2010
• Expiry date: Mar 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/63
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.