Leaded semiconductor power module with direct bonding and double sided cooling
US7759778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Oct 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A leaded semiconductor power module includes a first heatsink, an electrically insulated substrate thermally coupled to the first heatsink, one or more semiconductor chips, a leadframe substrate, and a second heatsink thermally coupled to the leadframe substrate, the assembly being overmolded with an encapsulant to expose the first heatsink, the second heatsink and peripheral terminals of the leadframe substrate. The semiconductor chips are electrically and structurally coupled to both the insulated substrate and the leadframe substrate, and conductive spacers electrically and structurally couple the insulated substrate to the leadframe substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.