Substrate and semiconductor device
US7759799B2 · kind B2 · utility
6Cited by
1References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aiming at adjusting the height of bump electrodes connected to lands on a substrate, a semiconductor device 100 has a first interconnect substrate 103 and a second interconnect substrate 101. On one surface of these substrates, first lands 111 and second lands 113 are provided. The plane geometry of the second lands 113 is a polygon characterized by the inscribed circle thereof having an area smaller than the area of the inscribed circle of the first land.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.