Semiconductor probe having resistive tip and method of fabricating the same
US7759954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | May 1, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.