Spin-torque memory with unidirectional write scheme
US7760542B2 · kind B2 · utility
7Cited by
4References
22Claims
0Family size
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Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Mar 10, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.