Dielectric composition with reduced resistance
US7763189B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/8615
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.