Metal-insulator-metal capacitor structure having low voltage dependence
US7763923B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jun 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.