Magnetic memory and method for writing to magnetic memory
US7764538B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory which employs spin torque magnetization reversal having a small write current value is applied. The memory includes: a switching element the conduction of which is controlled by a gate electrode, and three magnetoresistance effect elements connected to the switching element in series. Each magnetoresistance effect element may be a TMR element or a GMR element that includes a multilayered film composed of a fixed layer, a non-magnetic layer and a free layer. The central element serves as a storage element. The magnetoresistance effect elements are manufactured such that an absolute value of current necessary for changing a magnetization direction of at least one of the magnetoresistance effect elements located at both ends is larger than an absolute value of current necessary for changing a magnetization direction of the central magnetoresistance effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.