Memory device and method of reading memory data
US7764543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jan 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.