Patent · US Active

Fabrication method of an RF MEMS switch

US7765681B2 · kind B2 · utility

1Cited by
4References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 18, 2006
Grant dateAug 3, 2010
Priority date
Expiry dateApr 14, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49117
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.