Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors
US7767480B1 · kind B1 · utility
17Cited by
4References
79Claims
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Key dates
| Filing date | Feb 22, 2005 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.