Method for manufacturing a structure in a semiconductor device and a structure in a semiconductor device

US7767571B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Christoph Noelscher · Nuremberg, DE
• Sebastian Mosler · Dresden, DE

Key dates

• Filing date: Oct 13, 2006
• Grant date: Aug 3, 2010
• Expiry date: Oct 2, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention is concerned with a method for manufacturing a local wiring in a semiconductor device, comprising the manufacturing of at least two electrically conducting structures essentially in the same horizontal level in a layered stack on a substrate, the at least two electrically conducting structures being separated by a gap filled with at least one dielectric material, the gap being electrically bridged by conductive material, to form at least one contact element electrically connecting the at least two electrically conducting structures, whereby at least one contact element is produced in a single lithographic step.