Transparent organic thin film transistor
US7768002B2 · kind B2 · utility
16Cited by
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14Claims
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Key dates
| Filing date | Mar 4, 2009 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Mar 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
Abstract
A transparent organic thin film transistor, which contains a p-type organic semiconductor material employed in a semiconductor active layer of the transparent organic thin film transistor, wherein the p-type organic semiconductor material has a maximum absorbance of 0.2 or less in a visible range of 400 to 700 nm, in which the maximum absorbance is determined in the case where the thin film is made to have a film thickness of 30 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.