Formation of p-n homogeneous junctions
US7768003B2 · kind B2 · utility
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Key dates
| Filing date | Sep 14, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.