Semiconductor light-emitting device
US7768027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.