Ferroelectric thin films
US7768050B2 · kind B2 · utility
11Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | May 2, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.