Radiation-tolerant flash-based FPGA memory cells
US7768317B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jul 3, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0441
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A radiation-tolerant flash-based FPGA switching element includes a plurality of memory cells each having a memory transistor and a switch transistor sharing a floating gate. Four such memory cells are combined such that two sets of two switch transistors are wired in series and the two sets of series-wired switch transistors are also wired in parallel. The four memory transistors associated with the series-parallel combination of switch transistors are all programmed to the same on or off state. The series combination prevents an “on” radiation-hit fault to one of the floating gates from creating a false connection and the parallel combination prevents an “off” radiation-hit fault to one of the floating gates from creating a false open circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.