Manufacturing method and usage of crystallized metal oxide thin film
US7771531B2 · kind B2 · utility
3Cited by
13References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Aug 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0632
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.